Gamma-stimulated change of the photoluminescence properties of Cd1−xZnxTe thin films
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference20 articles.
1. Low‐temperature photoluminescence of detector grade Cd1−xZnxTe crystal treated by different chemical etchants
2. Cadmium zinc telluride high-resolution detector technology
3. Effects of low-temperature annealing on Ohmic contact of Au/p-CdZnTe
4. Metal–CdZnTe contact and its annealing behaviors
5. Gamma and electron radiation effects in CdTe
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1. Combinatorial study to the physical properties of Cd1-xZnxTe thin films as budding absorber for solar cell applications;Materials Research Bulletin;2023-07
2. Air annealing evolution to physical characteristics of Cd0.85Zn0.15Te thin films: absorber layer applications to solar cell devices;Journal of Materials Science: Materials in Electronics;2023-06
3. CdZnTe thin films as proficient absorber layer candidates in solar cell devices: a review;Energy Advances;2023
4. Composition dependence of structural and optical properties of Cd1−Zn Te thick films obtained by the close-spaced sublimation;Journal of Alloys and Compounds;2016-10
5. Sigmoid-growth curve of lattice-constant against annealing-temperature of Cd1−xZnxTe thin films and its structural, optical and morphological characteristics;Materials Science in Semiconductor Processing;2016-10
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