Achievements of the ATLAS upgrade planar pixel sensors R&D project-Reference-Cited by-同舟云学术

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Achievements of the ATLAS upgrade planar pixel sensors R&D project

Published:2014-11 Issue: Volume:765 Page:130-134
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Calderini G.

Funder

European Commission

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. Simulations of planar pixel sensors for the ATLAS high luminosity upgrade

2. Study of various high voltage protection structures for reduction of the insensitive region of silicon sensors designed for extreme radiation tolerance

3. F. Laemer, A. Schilp of Robert Bosch GmbH, Method of anisotropically etching silicon, US Patent No. 5,501,893, 1994.

4. The effect of different dicing methods on the leakage currents of n-type silicon diodes and strip sensors

5. VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT, Finland; 〈http://www.vtt.fi〉.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ATLAS ITk and new pixel sensors technologies;NUOVO CIM C-COLLOQ C;2016

2. Development of edgeless silicon pixel sensors on p-type substrate for the ATLAS high-luminosity upgrade;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2014-11

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