Development of edgeless silicon pixel sensors on p-type substrate for the ATLAS high-luminosity upgrade-Reference-Cited by-同舟云学术

Development of edgeless silicon pixel sensors on p-type substrate for the ATLAS high-luminosity upgrade

Published:2014-11 Issue: Volume:765 Page:146-150
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Calderini G.^ORCID,Bagolini A.,Bomben M.,Boscardin M.,Bosisio L.,Chauveau J.,Giacomini G.,La Rosa A.,Marchiori G.,Zorzi N.

Funder

Autonomous Province of Trento

Italian National Institute for Nuclear Physics (INFN)

French CNRS/IN2P3

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference20 articles.

1. ATLAS Technical Design Report, CERN/LHCC 2010-013.

2. M. Lamont, 〈http://dx.doi.org/10.3204/DESY-PROC-2010-01/8324〉.

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