Picosecond photoluminescence intensity correlation measurements of hot carriers in GaAs/AlxGa1−xAs quantum wells-Reference-Cited by-同舟云学术

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Picosecond photoluminescence intensity correlation measurements of hot carriers in GaAs/AlxGa1−xAs quantum wells

Published:1994-06 Issue:5 Volume:59 Page:303-313
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

de Paula A.M.,Ryan J.F.,Eakin H.J.W.,Tatham M.,Taylor R.A.,Turberfield A.J.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference32 articles.

1. Spectroscopy of hot carriers in semiconductors

2. Picosecond optical studies of 2D electron - 2D phonon dynamics

3. Time-Resolved Photoluminescence of Two-Dimensional Hot Carriers in GaAs-AlGaAs Heterostructures

4. Raman Scattering from Nonequilibrium LO Phonons with Picosecond Resolution

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence in GaN and InGaN and their applications in photonics;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

2. Chapter 3 Growth and optical properties of GaN;Processing and Properties of Compound Semiconductors;2001

3. Application of femtosecond-excitation correlation to the study of emission dynamics in hexagonal GaN;Physical Review B;1998-11-15

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