Dopant redistribution and formation of electrically active complexes in SiGe-Reference-Cited by-同舟云学术

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Dopant redistribution and formation of electrically active complexes in SiGe

Published:2001-02 Issue:1-3 Volume:4 Page:217-223
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Kuznetsov A.Yu.,Christensen J.S.,Monakhov E.V.,Lindgren A.-C.,Radamson H.H.,Nylandsted-Larsen A.,Svensson B.G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Stresses and strains in lattice‐mismatched stripes, quantum wires, quantum dots, and substrates in Si technology

2. Massalski TB, editor. Binary alloy phase diagrams, vol. 1. Ohio, USA: American Society for Metals, 1986.

3. Growth and characterization of compositionally graded, relaxed Si1-xGex

4. Comparison of Strain Relaxation in Si/SiGe/Si Heterostructures after Annealing in Oxidizing and Inert Atmospheres

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the formation of boron–germanium pairs in silicon–germanium mixed crystals;Physica B: Condensed Matter;2003-12

2. Arsenic diffusion in relaxedSi1−xGex;Physical Review B;2003-10-24

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