New experimental observations on the electrical characteristics of the Al/SRO/Si diode, and annealing effects
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Preparation and Some Properties of Chemically Vapor‐Deposited Si‐Rich SiO2 and Si3 N 4 Films
2. Crystallographic study of semi‐insulating polycrystalline silicon (SIPOS) doped with oxygen atoms
3. A model of charge transport in thermal SiO2 implanted with Si
4. A self-isolated and efficient power device for HVIC's: RESURF LDMOS with SIPOS layers
5. High-voltage planar structure using SiO2-SIPOS-SiO2film
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Determination of the energy states of the donor acceptor decay emission in silicon rich oxide prepared by low-pressure chemical vapor deposition;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-03
2. Study of the conduction properties of silicon-rich oxide under illumination;Thin Solid Films;2005-02
3. Modeling the Al/Si rich oxide (SRO)/Si structure;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
4. Duality metal oxide semiconductor–PN junction in the Al/silicon rich oxide/Si structure as a radiation sensor;Thin Solid Films;2000-09
5. New radiation sensors based on SRO/Si junction;2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547)
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