DLTS characterisation of InGaAlP films grown using different V/III ratios
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
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2. Improved performance of carbon‐doped GaAs base heterojunction bipolar transistors through the use of InGaP
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4. Conduction‐band discontinuity in InGaP/GaAs measured using both current‐voltage and photoemission methods
5. Heterojunction bipolar transistors in AlGaInP/GaAs grown by metalorganic vapor phase epitaxy
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1. Ordering induced direct and indirect transitions in semiconductor alloys;Physical Review B;2006-11-09
2. Negative Band Gaps in DiluteInNxSb1−xAlloys;Physical Review Letters;2004-04-01
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