An X-ray reflectivity study of the influence of anodic oxidation and annealing on interface structure in quantum well devices-Reference-Cited by-同舟云学术

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An X-ray reflectivity study of the influence of anodic oxidation and annealing on interface structure in quantum well devices

Published:1999-09 Issue:1 Volume:155 Page:85-91
ISSN:0927-7757
Container-title:Colloids and Surfaces A: Physicochemical and Engineering Aspects
language:en
Short-container-title:Colloids and Surfaces A: Physicochemical and Engineering Aspects

Author:

Brown A.S,Holt S.A,Creagh D.C,Yuan S

Publisher

Elsevier BV

Subject

Colloid and Surface Chemistry

Reference7 articles.

1. Single and double quantum well lasers with a monolithically integrated passive section

2. Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing

3. D.G. Deppe, H. Holonyak Jr., Appl. Phys. Lett. (1988) R3.

4. Application of Imaging-Grazing-Incidence X-ray Diffraction and Specular Reflectivity to the Structural Investigation of Quantum-Confinement Semiconductor Devices

5. Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05

2. Quantum well intermixing for photonic applications;SPIE Proceedings;2000-07-14

3. The atomic form factor and the X-ray dispersion corrections as tensor quantities: comparisons between theory and experiment;Radiation Physics and Chemistry;1999-08

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