Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN-Reference-Cited by-同舟云学术

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Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN

Published:1998-02 Issue:8 Volume:105 Page:497-501
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Buyanova I.A,Bergman J.P,Monemar B,Amano H,Akasaki I,Wysmolek A,Lomiak P,Baranowski J.M,Pakula K,Stepniewski R,Korona K.P,Grzegory I,Bockowski M,Porowski S

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference20 articles.

1. GaN, AlN, and InN: A review

2. Proc. Topical Workshop on III–V Nitrides;Monemar,1997

3. Excitonic emissions from hexagonal GaN epitaxial layers

4. Theory of the Contribution of Excitons to the Complex Dielectric Constant of Crystals

5. On the Dynamical Behavior of an Exciton

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1. Free Excitonic Emission in Homoepitaxial Layers Grown on Bulk GaN Substrates;Acta Physica Polonica A;2021-03

2. Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N;Journal of Applied Physics;2016-07-07

3. Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN;Journal of Applied Physics;2013-12-14

4. Photoluminescence studies of ZnO thin films on R-plane sapphire substrates grown by sol–gel method;Journal of Luminescence;2012-10

5. Phonon replicas lineshape in GaN epilayers: The A and B exciton contributions;NUOVO CIM C-COLLOQ C;2011

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