Structure and morphology of c-SiC films obtained by acetylene reaction with Si(111) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference38 articles.
1. Structural characterization of nanometer SiC films grown on Si
2. Growth mechanism of silicon carbide films on silicon substrates using C60 carbonization
3. SiC film formation from C60 monolayer on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces studied by HREELS-STM
4. SiC islands grown on Si(111)-(7 × 7) and Si(001)-(2 × 1) surfaces by C60 precursor
5. Surface phases of SiC islands grown over Si(111)-(7 × 7) using C60 as a precursor
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural, electronic, and energetic properties ofSiC[111]∕ZrB2[0001]heterojunctions: A first-principles density functional theory study;Physical Review B;2008-01-22
2. XPS and STM study of SiC synthesized by acetylene and disilane reaction with the Si(100)2×1 surface;Surface Science;2005-05
3. Effect of the silicon surface step on the acetylene reaction with the Si(111)7×7 reconstructed surface;Surface Science;2004-09
4. STM study of Si(1 1 1)7 × 7 reconstructed surface carbonization induced by acetylene;Surface Science;2004-06
5. Surface carbonization of Si(111) by C2H2 and the subsequent SiC(111) epitaxial growth from SiH4 and C2H2;Journal of Crystal Growth;2004-05
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