AlAs monolayer dependence of the radiative recombination rate in a type II GaAs–AlAs double quantum well
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference21 articles.
1. Optical properties and band structure of short-period GaAs/AlAs superlattices
2. Effects of electronic coupling on the band alignment of thin GaAs/AlAs quantum-well structures
3. Nature of the lowest electron states in short period GaAs-AlAs superlattices of type II
4. Order of theXconduction-band valleys in type-II GaAs/AlAs quantum wells
5. Recombination Processes in Short-Period GaAsAlAs Superlattices of Type II
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Oscillatory behavior of the Г-X coupling with AlAs thickness in type II GaAs/AlAs heterostructures;Springer Proceedings in Physics;2001
2. AlAs-monolayer dependence of theΓ−Xcoupling in GaAs-AlAs type-II heterostructures;Physical Review B;2000-12-15
3. ?-X Coupling in Diffused AlAs/GaAs Superlattices;physica status solidi (b);2000-10
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