Compressive deformation behavior of Al-doped β-SiC at elevated temperature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Ceramics and Composites
Reference11 articles.
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2. Pressure-sintered silicon carbide;Alliegro;J. Am. Ceram. Soc.,1956
3. The effect of doped aluminum on thermal stability of 4H- and 6H-SiC;Mitomo;Yogyo-Kyokai-Shi,1970
4. Microstructural study of deformation mechanisms in polycrystalline α-SiC deformed at high temperature;Duval-Riviere;Phy. Stat. Sol.,1996
5. Study of fracture behavior of very fine-grained silicon carbide ceramics;Kodama;J. Am. Ceram. Soc.,1990
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1. Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach;Journal of Crystal Growth;2014-03
2. High-temperature compressive creep of spark-plasma sintered additive-free polycrystalline β-SiC;Journal of the European Ceramic Society;2012-09
3. Effect of Al4SiC4 additive on the densification of β-silicon carbide under vacuum;Journal of the European Ceramic Society;2012-03
4. Effect of Aluminum Addition on Porosity and Flexural Strength of Porous Self-Bonded Silicon Carbide Ceramics;Journal of the Korean Ceramic Society;2009-09-30
5. Dense Polycrystalline SiC Fiber Derived from Aluminum-doped Polycarbosilane by One-Pot Synthesis;Journal of the Korean Ceramic Society;2007-07-31
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