Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD)-Reference-Cited by-同舟云学术

Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD)

Published:1999-06 Issue:6-7 Volume:19 Page:1463-1466
ISSN:0955-2219
Container-title:Journal of the European Ceramic Society
language:en
Short-container-title:Journal of the European Ceramic Society

Author:

Roeder J.F,Hendrix B.C,Hintermaier F,Desrochers D.A,Baum T.H,Bhandari G,Chappuis M,Van Buskirk P.C,Dehm C,Fritsch E,Nagel N,Wendt H,Cerva H,Hönlein W,Mazuré C

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference9 articles.

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2. Amanuma, K. and Kunio, T., Electrical characterization SrBi2Ta2O9 capacitors for non-volatile memory application. Integrated Ferroelectrics, 1997, 16, 175–182.

3. Ami, T., Hironaka, K., Isobe, C., Nagel, N., Sugiyama, M., Ikeda, Y., Wanatabe, K., Machida, A., Miura, K. and Tanaka, M., Preparation and properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using flash-MOCVD. In Metal–Organic Chemical Vapor Deposition of Electronic Ceramics II, ed. S. B. Desu, D. B. Beach and P. C. Van Buskirk. Mater. Res. Soc. Proc. 415, Pittsburgh, PA, 1996, pp. 195–200.

4. Li, T. K., Zhu, Y. F., Desu, S. B. and Nagata, M., The microstructure and properties of layered oxide thin films fabricated by MOCVD. In Metal–Organic Chemical Vapor Deposition of Electronic Ceramics II, ed. S. B. Desu, D. B. Beach, P. C. Van Buskirk. Mater. Res. Soc. Proc. 415, Pittsburgh, PA, 1996, pp. 189–194.

5. Isobe, C., Ami, T., Hironaka, K., Wanatabe, K., Sugiyama, M., Nagel, N., Katori, K., Ikeda, Y., Gutleben, C. D., Tanaka, M., Yamoto, H. and Yagi, H., Integrated Ferroelectrics, 1997, 14, 95–103.

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