Ferroelectric properties of PZT thin films prepared by sputtering with stoichiometric single oxide target: Comparison between conventional and rapid thermal annealing-Reference-Cited by-同舟云学术

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Ferroelectric properties of PZT thin films prepared by sputtering with stoichiometric single oxide target: Comparison between conventional and rapid thermal annealing

Published:1997-01 Issue:14 Volume:17 Page:1749-1755
ISSN:0955-2219
Container-title:Journal of the European Ceramic Society
language:en
Short-container-title:Journal of the European Ceramic Society

Author:

Velu G,Remiens D,Thierry B

Publisher

Elsevier BV

Subject

Materials Chemistry,Ceramics and Composites

Reference35 articles.

1. Ferroelectric memories

2. Ferroelectric Memories

3. Surface‐micromachined PbTiO3pyroelectric detectors

4. 10th International Symposium on Applications of Ferroelectrics (ISAF'96);Muralt,1996

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