Ion chemistry in tetramethylsilane (CH3)4Si
Author:
Publisher
Elsevier BV
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Reference12 articles.
1. Coating of steel by plasma-activated metal-organic chemical vapour deposition in the Si-C system
2. Process Study of Silicon Carbide Coatings Deposited on Steel by Plasma-Assisted Chemical Vapor Deposition from Tetramethylsilane-Argon Gas System
3. Sequential clustering reactions of SiD+ with SiD4: Rapid growth to kinetic dead‐end structures
4. Ion chemistry in tetraethylorthosilicate (C 2 H 5 O) 4 Si
5. Collisional detachment of negative ions using FTMS;Riehl,1992
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1. Electron interactions with tetramethylsilane from the ionization threshold up to 5000 eV;Plasma Sources Science and Technology;2021-09-01
2. Controlling the Energy-Level Alignment of Silicon Carbide Nanocrystals by Combining Surface Chemistry with Quantum Confinement;The Journal of Physical Chemistry Letters;2020-02-10
3. Electron collisions with X(CH3)4 molecules (X = C, Si, Ge);The Journal of Chemical Physics;2019-03-07
4. Electron collision cross sections for the TMS molecule and electron transport coefficients in TMS-Ar and TMS-O2 mixtures;Journal of the Korean Physical Society;2012-07
5. Cross sections for elastic electron scattering by tetramethylsilane in the intermediate-energy range;Physical Review A;2011-12-09
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