On the primary process in plasma-chemical and photochemical vapor deposition from silane: An ab initio study of unimolecular decomposition of SiH4 in the lowest triplet state-Reference-Cited by-同舟云学术

On the primary process in plasma-chemical and photochemical vapor deposition from silane: An ab initio study of unimolecular decomposition of SiH4 in the lowest triplet state

Published:1985-08 Issue:5 Volume:118 Page:498-502
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Tsuda Minoru,Oikawa Setsuko,Nagayama Kiyoshi

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference26 articles.

1. Substitutional doping of amorphous silicon

2. Influence of the plasma parameters on the properties of a-Si films prepared by glow-discharge deposition method

3. Monte‐Carlo simulation of electron properties in rf parallel plate capacitively coupled discharges

4. K. Tachibana, H. Harima and Y. Urano, Thin Solid Film, to be published;

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1. Electron-silane scattering cross section for plasma assisted processes;Physics of Plasmas;2017-03

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3. Atomic hydrogen temperature in silane plasmas used for the deposition of a-Si:H films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-11

4. Highly cross-linked polymer networks of amorphous silicon alloys: Quantum chemical studies on plasma and photochemical processes;Progress in Polymer Science;1996

5. SiH3CH3+F: A Potential Reaction System for Preparing Uniform SiC Film Predicted by Using an Ab Initio Molecular Orbital Method;Japanese Journal of Applied Physics;1994-09-15