Photoluminescence of the residual shallow acceptor in InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
2. Strained‐layer superlattices from lattice mismatched materials
3. A GaAsxP1−x/GaP strained‐layer superlattice
4. Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44
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1. Effect of background acceptor impurity on the radiative transition in low-dimensional InGaAs material;SPIE Proceedings;2000-12-15
2. Electroluminescence spectroscopy of AlGaAs/InGaAs and AlGaAs/GaAs high‐electron‐mobility transistors;Journal of Applied Physics;1995-03
3. Experimental characterization of hot-electron-induced effects and light emission in heterostructure devices;Semiconductor Science and Technology;1994-05-01
4. Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs;IEEE Transactions on Electron Devices;1993-07
5. Hot Electron Induced Impact Ionization and Light Emission in GaAs Based MESFETs, HEMTs, PM-HEMTs and HBTs;Negative Differential Resistance and Instabilities in 2-D Semiconductors;1993
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