Electric field effects on radiation defects annealing in p-InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
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1. Revealing substructures of H4 and H5 hole traps in p-type InP using Laplace deep-level transient spectroscopy;Journal of Applied Physics;2010-08-15
2. Evidence for two distinct defects contributing to theH4deep-level transient spectroscopy peak in electron-irradiated InP;Physical Review B;1998-12-15
3. OBSERVATION OF A LONG-RANGE ELECTRIC DRIFT OF NEGATIVELY CHARGED VACANCIES IN THE SPACE-CHARGE REGIONS OF AU/N-SI SCHOTTKY DIODES;Journal of Physics: Condensed Matter;1995-09-25
4. Effect of carrier concentration on the properties of irradiation‐induced defects inp‐type indium phosphide grown by metalorganic chemical vapor deposition;Journal of Applied Physics;1992-05
5. Deep level transient spectroscopy of irradiatedp‐type InP grown by metalorganic chemical vapor deposition;Journal of Applied Physics;1991-02
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