Spatial variation of bandgap energy in In0.53Ga0.47As-Reference-Cited by-同舟云学术

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Spatial variation of bandgap energy in In0.53Ga0.47As

Published:1984-08 Issue:6 Volume:51 Page:425-428
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Penna A.F.S.,Shah Jagdeep,Chang T.Y.,Burroughs M.S.,Nahory R.E.,Tamargo M.,Cox H.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference5 articles.

1. GaInAsP Alloy Semiconductors,1982

2. Optical studies of In0.53Ga0.47As

3. Alloy scattering and high field transport in ternary and quaternary III–V semiconductors

4. Ninth Int. Symp. GaAs and Related Compounds;de Cremoux,1981

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+p junction devices;Journal of Applied Physics;2000-04

2. Radiative recombination of epitaxial In1−x Ga x As layers grown on indium phosphide substrates;Journal of Applied Spectroscopy;1994-05

3. Alloy broadening in photoluminescence spectra of GaxIn1−xAsyP1−ylattice matched to InP;Journal of Applied Physics;1994-03

4. Interband transitions inInxGa1−xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy;Physical Review B;1993-03-15

5. Characterisation of Semiconductors by Differential Reflectance Spectroscopy;Australian Journal of Physics;1991

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