Initial stages of GaP(1 1 0) oxidation-Reference-Cited by-同舟云学术

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Initial stages of GaP(1 1 0) oxidation

Published:1988-08 Issue:6 Volume:67 Page:647-650
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Chiaradia P.,Fanfoni M.,De Padova P.,Nataletti P.,Brillson L.J.,Viturro R.E.,Slade M.L.,Margaritondo G.,Kelly M.K.,Kilday D.,Tache N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference21 articles.

1. Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP

2. Electronic structure of cleaved clean and oxygen-covered GaAs (110) surfaces

3. Oxidation properties of GaAs (110) surfaces

4. X-ray photoemission study of the initial oxidation of the cleaved (110) surfaces of GaAs, GaP and InSb

5. Oxygen and hydrogen adsorption on GaAs(110)

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of oxygen adsorption on laser-induced sputtering from GaP(110) surfaces;Surface Science;1991-11

2. Effects of oxygen adsorption on laser-induced sputtering from GaP(110) surfaces;Surface Science Letters;1991-11

3. Fermi-level pinning and intrinsic surface states in cleaved GaP;Physical Review B;1989-03-15

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