Calculation of the intensity-dependent changes of the index of refraction in GaAS-Reference-Cited by-同舟云学术

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Calculation of the intensity-dependent changes of the index of refraction in GaAS

Published:1981-06 Issue:11 Volume:38 Page:1023-1026
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Koch S.W.,Schmitt-Rink S.,Haug H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference10 articles.

1. Optical bistability in semiconductors

2. D.A.B. Miller, S.D. Smith and C.T. Seaton, IEEE Journal of Quantum Electronics, to be published and references therein

3. S.W. Koch, S. Schmitt-Rink and H. Haug, Physica Status Solidi (b), to be published

4. Electron-hole plasma in direct-gap semiconductors with low polar coupling: GaAs, InP, and GaSb

5. Gain Spectrum of an e–h Liquid in Direct Gap Semiconductors

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-linear optical materials and applications;Materials Science Reports;1993-01

2. On the Microscopic Theory of the Resonant Nonlinear Refractive Index of InSb;physica status solidi (b);1985-07-01

3. REFERENCES;Optical Bistability: Controlling Light with Light;1985

4. OPTICAL BISTABILITY;Laser Handbook;1985

5. Nonlinear susceptibility x;(3) in a direct gap semiconductor derived from coupled inter-and intraband equations of motion;Solid State Communications;1984-12

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