Observation of shallow residual donors in high purity epitaxial GaAs by means of photoluminescence spectroscopy

Author:

Almassy R.J.,Reynolds D.C.,Litton C.W.,Bajaj K.K.,McCoy G.L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference8 articles.

1. Reliable far-infrared photoconductivity method to identify a variety of residual donors in epitaxial GaAs

2. Precision verification of effective mass theory for shallow donors in GaAs

3. Gallium Arsenide and Related Compounds;Stradling;Inst. Phys. Conf. Ser,1972

4. Silicon as a residual donor in high‐purity GaAs

5. Gallium Arsenide and Related Compounds;Wolfe;Inst. Phys. Conf. Ser,1977

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