Terahertz photoluminescence from GaAs doped with shallow donors at interband excitation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3441401
Reference13 articles.
1. Far Infrared Electron-Ionized Donor Recombination Radiation in Germanium
2. Far-Infrared Recombination Radiation from Impact-Ionized Shallow Donors in GaAs
3. Terahertz electroluminescence from boron-doped silicon devices
4. Terahertz electroluminescence under conditions of shallow acceptor breakdown in germanium
5. THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures
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