Incorporation of oxygen into nanocrystalline silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference18 articles.
1. Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C
2. Optical absorption in hydrogenated microcrystalline silicon
3. Properties of microcrystalline silicon. IV. Electrical conductivity, electron spin resonance and the effect of gas adsorption
4. A thermodynamic criterion of the crystalline-to-amorphous transition in silicon
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3. Precise control over oxygen impurities in nano-crystalline silicon thin film processed with a low hydrogen dilution gas system at near room temperature;Current Applied Physics;2014-06
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