Precise control over oxygen impurities in nano-crystalline silicon thin film processed with a low hydrogen dilution gas system at near room temperature-Reference-Cited by-同舟云学术

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Precise control over oxygen impurities in nano-crystalline silicon thin film processed with a low hydrogen dilution gas system at near room temperature

Published:2014-06 Issue:6 Volume:14 Page:901-904
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Jang Jin Nyoung,Lee Dong Hyeok,Hong MunPyo

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference36 articles.

1. Mechanism for hydrogen-enhanced oxygen diffusion in silicon;Capaz;Phys. Rev. B,1999

2. Hydrogenated Amorphous Silicon;Street,1991

3. Model for growth of a-Si:H and its alloys;Street;Phys. Rev. B,1991

4. Effects of oxygen on crystallization of amorphous silicon films and polysilicon TFT characteristics;Ha;J. Electron. Mater.,1994

5. Solution-processed silicon films and transistor;Shimoda;Nature,2006

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A single gas barrier layer of high-density Al2O3 formed by neutral beam-assisted sputtering at room temperature;Thin Solid Films;2019-03

2. Trace elements study of high purity nanocrystalline silicon carbide (3C-SiC) using k 0 -INAA method;Physica B: Condensed Matter;2017-07

3. Additive analysis of nano silicon under the influence of neutron irradiation;International Journal of Modern Physics B;2016-04-20

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