Impact of surface processing on Al/GaAs(100) interface states
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference36 articles.
1. Raman Scattering from InSb Surfaces at Photon Energies Near theE1Energy Gap
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4. Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy
5. Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
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1. Interface states at semiconductor junctions;Reports on Progress in Physics;1999-01-01
2. Schottky diode properties of Au, InGaP (111) and (110) chemically etched surfaces;Solid-State Electronics;1995-02
3. Temperature‐dependent composition, ordering, and band bending at GaP(100) surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1993-07
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