Inter-subband spectroscopy in hole space charge layers on (110) and (111) Si surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference13 articles.
1. Spectroscopy of surface space charge layers
2. Proc. 12th Int. Conf. Phys. Semicond.;Kamgar,1974
3. Electronic levels in surface space charge layers on Si(100)
4. Hartree Approximation for the Electronic Structure of ap-Channel Inversion Layer of Silicon M. O. S.
5. The Electronic Structure ofp-Channel Inversion Layers of Silicon (100) M.O.S.: Many-Body Effects on Subbands
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1. Density-functional calculation for quasi-two-dimensional hole gases;Physical Review B;1994-11-15
2. Calculation of the intersubband absorption strength in ellipsoidal-valley quantum wells;Physical Review B;1990-04-15
3. Infrared spectroscopy of the hole subbands on Si;Physical Review B;1984-11-15
4. Parallel excitation of hole and electron intersubband resonances in space-charge layers on silicon;Physical Review B;1984-10-15
5. Lifting of the Spin Degeneracy of Hole Subbands in a Surface Electric Field on Silicon;Physical Review Letters;1984-07-30
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