Infrared spectroscopy of the hole subbands on Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.30.6023/fulltext
Reference17 articles.
1. Electronic properties of two-dimensional systems
2. Electronic levels in surface space charge layers on Si(100)
3. Inter-subband spectroscopy in hole space charge layers on (110) and (111) Si surfaces
4. Intersubband resonance of holes and interaction with 2D plasmons on Si
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1. Accurate ground-state variational wavefunction for the two-dimensional electron gas;International Journal of Modern Physics B;2014-06-24
2. Effect of surface carrier concentration on valence subbands in Si(111)p-type inversion layers: Angle-resolved photoemission spectroscopy;Physical Review B;2010-07-29
3. Type of the second hole subband on the Si(110) surface: Spin splitting anisotropy;JETP Letters;2008-02
4. Density-functional calculation for quasi-two-dimensional hole gases;Physical Review B;1994-11-15
5. IR detection using subband absorption in delta -doping layers;Semiconductor Science and Technology;1991-12-01
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