The cathodoluminescence of Ga∞In1-∞P alloys-Reference-Cited by-同舟云学术

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The cathodoluminescence of Ga∞In1-∞P alloys

Published:1971-02 Issue:3 Volume:9 Page:245-247
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Mabbitt A.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference13 articles.

1. Proc. 9th Int. Conf. Phys. Semiconductors;Hilsum,1968

2. (In,Ga)P alloys: photoluminescence excitation and cathodoluminescence of zinc doped indirect gap alloys

3. Proc. 10th Int. Conf. Phys. Semiconductors;Hakki,1970

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1. Electronic properties of Ga In1−P ternary alloy from first-principles;Computational Materials Science;2016-07

2. Band parameters for III–V compound semiconductors and their alloys;Journal of Applied Physics;2001-06

3. Photoluminescence properties of N‐implanted Al0.30Ga0.70As0.62P0.38alloy grown on GaAs0.61P0.39substrates;Journal of Applied Physics;1993-07

4. Photoluminescence study of rapid thermal annealing from nitrogen‐implanted In0.32Ga0.68P;Journal of Applied Physics;1992-09

5. Conduction‐band minima of InP: Ordering and absolute energies;Applied Physics Letters;1990-11-26

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