Thickness variations in amorphous As2S3 films induced by electron beam
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference24 articles.
1. Electron-Beam-Induced Refractive-Index Change of Amorphous Semiconductors
2. Direct writing of optical gratings using a scanning electron microscope
3. Scanning-electron-microscope-written gratings in chalcogenide films for optical integrated circuits
4. Microgratings for high-efficiency guided-beam deflection fabricated by electron-beam direct-writing techniques
5. Integrated grating circuit for guided-beam multiple division fabricated by electron-beam direct writing
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1. Direct surface relief formation in nanomultilayers based on chalcogenide glasses: A review;Surface Engineering and Applied Electrochemistry;2016-09
2. Electron beam-induced mass transport in As–Se thin films: compositional dependence and glass network topological effects;Journal of Physics D: Applied Physics;2013-06-03
3. Electron irradiation induced reduction of the permittivity in chalcogenide glass (As2S3) thin film;Journal of Applied Physics;2013-01-28
4. Refractive index change caused by electron irradiation in amorphous As–S and As–Se thin films coated with different metals;Journal of Applied Physics;2001-09
5. Refractive-index change caused by electrons in amorphous AsS and AsSe thin films doped with different metals by photodiffusion;Journal of the Optical Society of America B;2001-08-01
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