Derivative transmission measurements of the temperature dependance of the Γ-Γ transition in the Ga0.73In0.27As0.59P0.41 compound
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference13 articles.
1. Low‐threshold LPE In1−x′Gax′P1−z′Asz′/In1−xGaxP1−zAsz/In1−x′Gax′P1−z′Asz′yellow double‐heterojunction laser diodes (J<104A/cm2, λ∼5850 Å, 77 °K)
2. Tungsten as a marker in thin‐film diffusion studies
3. Pulsed room‐temperature operation of In1−xGaxP1−zAszdouble heterojunction lasers at high energy (6470 Å, 1.916 eV)
4. Observation of the transferred‐electron effect in GaxIn1−xAsyP1−y
5. Lattice vibrations of In1−xGaxAsyP1−yquaternary compounds
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3. Wavelength and composition dependence of the thermo-optic coefficient for InGaAsP-based integrated waveguides;Journal of Applied Physics;2016-12-07
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5. Theoretical analysis of disorder effects on electronic and optical properties in InGaAsP quaternary alloy;Journal of Applied Physics;1997-11-15
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