Rutherford backscattering and secondary ion mass spectrometry studies of erbium implanted silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference4 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
3. Rutherford backscattering and channelling studies of erbium implanted SIMOX structures
4. Transient annealing for the production of n+ contact layers in GaAs
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1. Study on preventing segregation of erbium atoms to a silicon surface by annealing in oxygen atmosphere at high temperature;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-05
2. Holmium redistribution upon solid-phase epitaxial crystallization of amorphized silicon layers;Semiconductors;2000-01
3. Redistribution of erbium during the crystallization of buried amorphous silicon layers;Semiconductors;1999-06
4. Effect of ion implantation on redistribution of erbium during solid-phase epitaxial crystallization of silicon;Semiconductors;1999-01
5. Model of the redistribution of erbium during the solid-phase epitaxial crystallization of silicon;Semiconductors;1998-12
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