Excitonic transitions in GaAsAlGaAs superlattices studied with lateral photoconductivity
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. Electric field dependence of optical absorption near the band gap of quantum-well structures
2. Reflectance line shapes from GaAs/Ga1−xAlxAs quantum well structures
3. Investigation of GaAs/(Al,Ga)As multiple quantum wells by photoreflectance
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1. Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies;Journal of Applied Physics;2004-04
2. Exciton-electron dynamics studied by microwave photoconductivity and photoluminescence in undopedGaAs/Al0.3Ga0.7Asquantum wells;Physical Review B;1999-12-15
3. Temperature dependence of exciton peak energies in multiple quantum wells;Journal of Applied Physics;1998-03-15
4. Optical-microwave study of electron-exciton dynamics in undoped GaAs/AlGaAs quantum wells;Journal of Luminescence;1998-02
5. Pseudo-negative photocurrent spectroscopy in GaAs-AlAs superlattices;Journal of Applied Physics;1996
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