Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1651323
Reference23 articles.
1. Excitonic transitions in GaAsAlGaAs superlattices studied with lateral photoconductivity
2. Characterization of excitons in wurtzite GaN quantum wells under valence band mixing, strain, and piezoelectric field
3. Exciton localization and the Stokes’ shift in InGaN epilayers
4. Broadening of near-band-gap photoluminescence in n-GaN films
5. Strain relaxation and exciton localization effects on the Stokes shift in InAsxP1−x/InP multiple quantum wells
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1. The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures;Materials;2022-04-08
2. Deep-UV wavelength-selective photodetectors based on lateral transport in AlGaN/AlN quantum well and dot-in-well structures;AIP Advances;2021-08-01
3. Wurtzite quantum well structures under high pressure;Journal of Applied Physics;2020-08-07
4. Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2019-02
5. Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites;ACS Applied Nano Materials;2018-07-17
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