Electron temperatures in Si-MOSFETs: Determination from broadband far infrared emission
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference9 articles.
1. Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers
2. Energy loss of warm electrons at the interface of (100) silicon MOSFETS
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4. Proc. Int. Conf. on The Application of High Magnetic Fields in Semiconductor Physics;Kawaji,1983
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