Energy loss of warm electrons at the interface of (100) silicon MOSFETS
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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2. Determination of deformation potential constant of the conduction band in Si from electron heating experiments on Si metal-oxide-semiconductor field-effect transistors;Applied Physics Letters;2007-09-24
3. Hot electron energy relaxation via acoustic phonon emission in modulation-dopedIn0.53Ga0.47As/In0.52Al0.48Asheterojunctions with double-subband occupancy;Physical Review B;2001-07-10
4. Phonon Emission, Absorption, and Reflection from a Two-Dimensional Electron Gas;Physics of Low-Dimensional Semiconductor Structures;1993
5. Energy relaxation of light holes in InAs.15Sb.85/InSb multiple quantum wells;Solid-State Electronics;1989-12
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