Energies of electrons bound to nitrogen pairs in GaP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference26 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. Isoelectronic Donors and Acceptors
3. Radiative recombination from electron-hole drops in n-doped GaP
4. Electron–hole liquid in GaP the influence of the isoelectronic impurity nitrogen
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hydrostatic pressure dependence of isoelectronic bound excitons in beryllium-doped silicon;Physical Review B;1996-02-15
2. Nitrogen Bound Electrons, Excitons, and Multiexcitons in GaP;physica status solidi (b);1987-12-01
3. The Influence of Correlation and Band Structure Effects on an Exciton Weakly Bound to an Isoelectronic Impurity;physica status solidi (b);1985-03-01
4. Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs1−xPx:N;physica status solidi (b);1984-08-01
5. EHP Luminescence of GaP:N under Resonant Free-Exciton Excitation;physica status solidi (b);1984-04-01
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