Silicon valence band auger spectrum : A cluster approach
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference10 articles.
1. Valence-band Auger line shapes for Si surfaces: Simplified theory and corrected numerical results
2. Auger-Electron Spectroscopy as a Local Probe of Atomic Charge: SiL2,3VV
3. Comment on the Relation of Relaxation to Electronic-Energy-Level Structure on the Si(111) Surface
4. Localized description of the electronic structure of covalent semiconductors. I. Perfect crystals
5. Effect of Relaxation and Reconstruction on the Electronic-Energy-Level Structure of the Si(111) Surface
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The Role of Inter-Atomic Transitions in AES;Physica Scripta;1992-01-01
2. Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV Auger lineshape compared with cluster calculations;Surface Science;1989-08
3. The influence of the (2 × 1) reconstruction of the Si(1 0 0) surface on the SiL2,3 VV Auger lineshape;Solid State Communications;1989-07
4. Charge transfer, polarization, and relaxation effects on the Auger line shapes of Si;Physical Review B;1986-02-15
5. The influence of hydrogen saturation on the local densities of states in small Si, Ge AND GaAs clusters;Surface Science;1981-05
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