On the temperature dependence of mixed conduction in Cr-doped GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference3 articles.
1. The Preparation of Semi-Insulating Gallium Arsenide by Chromium Doping
2. Semiconducting III–V Compounds;Hilsum,1961
3. Negative Resistance in Chromium‐Doped GaAs p‐i‐n Diodes
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Temperature change of Hall and Seebeck coefficient sign in InP doped with transition metals;Semiconductor Science and Technology;2003-11-03
2. Mixed conductivity and potential fluctuations in semi-insulating GaAs:Cr;Physical Review B;1987-04-15
3. Chapter 2 The Electrical and Photoelectronic Properties of Semi-Insulating GaAs;Semiconductors and Semimetals;1983
4. Intrinsic densityni(T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficients;Journal of Applied Physics;1982-01
5. The electrical characterization of semi‐insulating GaAs: A correlation with mass‐spectrographic analysis;Journal of Applied Physics;1977-12
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