Laser emission due to excitonic recombination processes in high purity GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAs
2. Optical Gain in Lightly Doped GaAs
3. THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY‐DOPED LIMIT
4. Coulomb Interaction in Semiconductor Lasers
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2. Photoluminescence spectroscopy of crystalline semiconductors;Materials Science and Engineering: R: Reports;1997-03
3. Interpretation of magnetophotoluminescence spectra of narrow-gap IV-VI semiconductors;Physical Review B;1994-12-15
4. Chapter 5 Effects of Heavy Doping and High Excitation on the Band Structure of Gallium Arsenide;Semiconductors and Semimetals;1993
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