Anisotropy of hot electrons in high resistivity silicon - preliminary results
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference5 articles.
1. On a new method for measuring the charge carriers drift mobility in high resistivity silicon
2. The field-dependence of carrier mobility in silicon and germanium
3. Conductivity anisotropy and hot electron temperature in silicon
4. Conductivity anisotropy of hot electrons in n-type silicon heated by microwave fields
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Drift Velocity and Trapping in Semiconductors—Transient Charge Technique;Applied Solid State Science;1972
2. Field dependence of electron mobility in high-resistivity n-type silicon at 77°K;Physics Letters A;1969-05
3. Plasma effects and charge collection time in solid state detectors;Nuclear Instruments and Methods;1969-01
4. Anisotropy of high-field electron transport phenomena in silicon;Il Nuovo Cimento B Series 10;1968-12
5. Electrons and holes drift velocity in silicon at very low temperature;Solid State Communications;1968-10
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