Investigation of Al2O3 film-thickness by tunnel emission and capacitance measurements
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference15 articles.
1. Effect of Insulating‐Film‐Thickness Nonuniformity on Tunnel Characteristics
2. Influence of non-uniform thickness of dielectric layers on capacitance and tunnel currents
3. INTERPRETATION OF TUNNEL EMISSION AND CAPACITANCE MEASUREMENTS IN THE PRESENCE OF DIELECTRIC FILM‐THICKNESS FLUCTUATIONS
4. The Growth of Barrier Oxide Films on Aluminum
5. Basic Problems in Thin Film Physics;Gundlach,1966
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1. Contribution of interface capacitance to the electric-field breakdown in thin-film Al–AlOx–Al capacitors;Applied Physics Letters;2003-09-22
2. Interface states at the anodized Al2O3-metal interface;Journal of Applied Physics;2001-05-15
3. Al‐Al2O3‐Pd junction hydrogen sensor;Journal of Applied Physics;1994-07
4. Charge and energy transport by tunneling thermoelectric effect;Journal of Applied Physics;1993-09-15
5. Properties of amorphous germanium tunnel barriers;Journal of Applied Physics;1985-08-15
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