Oxidation temperature dependent restructuring of the Pb defect at the (1 1 1) interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference9 articles.
1. Characterization of Si/SiO2 interface defects by electron spin resonance
2. Electron spin resonance of [11̄1], [1̄11], and [111̄] oriented dangling orbitalPb0defects at the (111) Si/SiO2interface
3. Structural relaxation ofPbdefects at the (111)Si/SiO2interface as a function of oxidation temperature: ThePb-generation–stress relationship
4. Theg-Values of Defects in Amorphous C, Si and Ge
5. Theg-Values of Defects in Amorphous C, Si and Ge
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1. Influence of interface relaxation on passivation kinetics in H2 of coordination Pb defects at the (111)Si/SiO2 interface revealed by electron spin resonance;Journal of Applied Physics;2002-08
2. The physics of determining chip reliability;IEEE Circuits and Devices Magazine;2001-05
3. Interaction of Pb defects at the (111)Si/SiO2 interface with molecular hydrogen: Simultaneous action of passivation and dissociation;Journal of Applied Physics;2000-07
4. Dissociation kinetics of hydrogen-passivatedPbdefects at the(111)Si/SiO2interface;Physical Review B;2000-03-15
5. Electron spin resonance study of the interaction of hydrogen with the (111)Si/SiO2 interface: Pb-hydrogen interaction kinetics;Physica B: Condensed Matter;1999-12
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