Electronic Raman scattering from carbon acceptors in undoped GaAs-Al1-xGaxAs multiple quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. Hydrogenic impurity states in a quantum well: A simple model
2. Energy spectra of donors inGaAs−Ga1−xAlxAsquantum well structures in the effective-mass approximation
3. Far infrared impurity absorption in a quantum well
4. Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structures
5. Binding energies of acceptors in GaAs-AlxGa1−xAsquantum wells
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2. Screening and exchange in the theory of the femtosecond kinetics of the electron-hole plasma;Physical Review B;1993-04-15
3. Photoluminescence due to a bound-to-bound transition in a GaAs-Al0.3Ga0.7As quantum-well structure;Physical Review B;1991-04-15
4. Raman characterization of semiconducting materials and related structures;Progress in Crystal Growth and Characterization of Materials;1991-01
5. Raman Spectroscopy of Dopant Impurities and Defects in GaAs Layers;Light Scattering in Semiconductor Structures and Superlattices;1991
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