Coupling of ground and excited state excitations in GaAs under uniaxial stress-Reference-Cited by-同舟云学术

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Coupling of ground and excited state excitations in GaAs under uniaxial stress

Published:1986-05 Issue:7 Volume:58 Page:417-419
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Jagannath C.,Koteles Emil S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference12 articles.

1. Excitons;Birman,1982

2. Polariton effect in degenerate valence band semiconductors

3. Excitons;Koteles,1982

4. Light Scattering in Solids III, Recent Results;Weisbuch,1982

5. Polariton Reflectance and Photoluminescence in High-Purity GaAs

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1. Lattice parameter variation in doped GaAs substrates determined using high resolution photoluminescence spectroscopy;Journal of Applied Physics;1998-12

2. Exciton-Exciton Interactions in AlAs/GaAs Coupled Quantum Wire Arrays;Physical Review Letters;1998-11-16

3. Photoluminescence spectroscopy of crystalline semiconductors;Materials Science and Engineering: R: Reports;1997-03

4. Magneto-optical properties of biaxially strained quantum wells;Philosophical Magazine B;1994-09

5. Damage coefficient associated with free exciton lifetime in GaAs irradiated with neutrons and electrons;Journal of Applied Physics;1992-04-15

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