Lattice parameter variation in doped GaAs substrates determined using high resolution photoluminescence spectroscopy-Reference-Cited by-同舟云学术

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Lattice parameter variation in doped GaAs substrates determined using high resolution photoluminescence spectroscopy

Published:1998-12 Issue:11 Volume:84 Page:6305-6311
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hu J.,Harrison D. A.,Karasyuk V. A.,Watkins S. P.,Thewalt M. L. W.,Bassignana I. C.,Beckett D. J. S.,Hillier G. C.,SpringThorpe A. J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.368953

Reference17 articles.

1. Variation in the lattice parameter and crystal quality of commercially available Si-doped GaAs substrates

2. Lattice dilation by free electrons in heavily doped GaAs:Si

3. Setting limits on the accuracy of X-ray determination of Al concentration in epitaxial layers

4. Strain effects in high‐purity InP epilayers grown on slightly mismatched substrates

5. Stress effects on excitons bound to shallow acceptors in GaAs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-resolution photoluminescence measurement of the isotopic-mass dependence of the lattice parameter of silicon;Physical Review B;2008-03-10

2. Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions;Physica B: Condensed Matter;2006-04

3. Measurement of GaAs/(Al,Ga)As materials parameters for QWIP design calculations;SPIE Proceedings;1999-07-26

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