Broadening of the Si doping layer in planar-doped GaAs in the limit of high concentrations-Reference-Cited by-同舟云学术

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Broadening of the Si doping layer in planar-doped GaAs in the limit of high concentrations

Published:1991-06 Issue:9 Volume:78 Page:793-796
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Rodrigues R.,Guimarães P.S.S.,Sampaio J.F.,Nogueira R.A.,Oliveira A.T.,Dias I.F.,Bezerra J.C.,de Oliveira A.G.,Chaves A.S.,Scolfaro L.M.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference9 articles.

1. Zrenner, H. Reisinger, F. Koch and K. Ploog, 17th ICPS, Springer, New York, p. 325

2. Subband mobility of quasi‐two‐dimensional electrons in Si atomic layer doped GaAs

3. Effect of substrate temperature on migration of Si in planar‐doped GaAs

4. Migration of Si IN δ-doped GaAs and Al Ga1 − As: Effect of substrate temperature

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-dimensional limitations when increasing the Si-concentration from δ-doping to thin Si-layers in GaAs;Journal of Crystal Growth;1997-05

2. Temperature dependence of the equilibrium Hall concentration in silicon planar-doped GaAs samples;Solid State Communications;1996-06

3. Electrical conductivity of δ doping superlattices parallel to the growth direction;Materials Science and Engineering: B;1995-12

4. Photoconductivity andn‐ top‐type transition in silicon planar‐doped GaAs structures with a doped cap layer;Journal of Applied Physics;1995-08-15

5. GROWTH AND CHARACTERIZATION OF GAAS/SI/GAAS HETEROSTRUCTURES;J CRYST GROWTH;1995

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