Γ-X mixing of the free and bound exciton in GaAs1-xPx
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference31 articles.
1. Valley-Orbit Splitting of Free Excitons? The Absorption Edge of Si
2. Electronic impurity levels in semiconductors
3. Electron-Core-Hole Interaction in GaAsP
4. Effect of Uniaxial Stress on Excitons Bound to Bismuth in GaP
5. Proc. of the Sixth Int. Symp. on Gallium Arsenide and Related Compounds;Dingle,1976
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