Influence of diameter on temperature dynamics of hot carriers in photoexcited GaAsP nanowires-Reference-Cited by-同舟云学术

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Influence of diameter on temperature dynamics of hot carriers in photoexcited GaAsP nanowires

Published:2021-07-21 Issue:4 Volume:104 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Sivan Aswathi K.,Di Mario Lorenzo,Zhang Yunyan,Catone Daniele^ORCID,O’Keeffe Patrick,Turchini Stefano,Mussi Valentina^ORCID,Liu Huiyun,Martelli Faustino^ORCID

Funder

H2020 Marie Skłodowska-Curie Actions

Engineering and Physical Sciences Research Council

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.104.045423/fulltext

Reference56 articles.

1. Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

2. Continuous gas-phase synthesis of nanowires with tunable properties

3. Nanowire photonics

4. Complete composition tunability of InGaN nanowires using a combinatorial approach

5. Band-Gap Engineering of Semiconductor Nanowires through Composition Modulation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Auger heating and Shockley-Read-Hall recombination on hot-carrier dynamics in InGaAs nanowires;Physical Review B;2024-06-20

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