The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. See, for instance, the proceedings of the first Topical Workshop on Gallium Nitride (TWN'95), Nagoya, Japan
2. S. Nakamura et al., Jap.J. Appl Phys (Janv. 96, in press).
3. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
4. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
5. Infrared Lattice Vibrations and Free-Electron Dispersion in GaN
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